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| inchange semiconductor isc product specification isc silicon pnp power transistor 2SB1530 description collector-emitter breakdown voltage- : v (br)ceo = -150v(min.) complement to type 2sd2337 applications designed for low frequency power amplifier color tv vertical deflecti on output applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -200 v v ceo collector-emitter voltage -150 v v ebo emitter-base voltage -6 v i c collector current-continuous -2 a i cm collector current-peak -5 a collector power dissipation @ t a =25 1.5 p c collector power dissipation @ t c =25 20 w t j junction temperature 150 t stg storage temperature range -45~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistor 2SB1530 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = -10ma; r be = -150 v v (br)ebo emitter-base breakdown voltage i e = -5ma; i c = 0 -6 v v ce (sat) collector-emitter saturation voltage i c = -0.5a; i b = -50ma b -3.0 v v be (on) base-emitter on voltage i c = -50ma; v ce = -4v -1.0 v i cbo collector cutoff current v cb = -120v; i e = 0 -1 a h fe-1 dc current gain i c = -50ma; v ce = -4v 60 200 h fe-2 dc current gain i c = -0.5a; v ce = -10v 60 ? h fe- 1 classifications b c 60-120 100-200 isc website www.iscsemi.cn 2 |
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